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| SI7852DP New Product Vishay Siliconix N-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) 0.0165 @ VGS = 10 V 0.022 @ VGS = 6 V ID (A) 12.5 10.9 D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching APPLICATIONS D Primary Side Switch for DC/DC Applications PowerPAKt SO-8 D S 1 2 3 4 D 8 7 6 5 D D D S S G 6.15 mm 5.15 mm G S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 80 "20 12.5 Steady State Unit V 7.6 6.1 50 40 A ID IDM IAS IS PD TJ, Tstg 10.0 4.7 5.2 3.3 -55 to 150 1.7 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71627 S-03829--Rev. A, 28-May-01 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 19 52 1.5 Maximum 24 65 1.8 Unit _C/W C/W 1 SI7852DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 64 V, VGS = 0 V VDS = 64 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A rDS(on) VGS = 6.0 V, ID = 8.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 15 V, ID = 10 A IS = 2.8 A, VGS = 0 V 50 0.0135 0.0175 25 0.75 1.1 0.0165 0.022 W S V 2.0 "100 1 5 V nA mA m A Symbol Test Condition Min Typ Max Unit Drain-Source On-State Resistancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = 2.8 A, di/dt = 100 A/ms VDD = 40 V, RL = 40 W ID ^ 1.0 A, VGEN = 10 V, RG = 6 W VDS = 40 V, VGS = 10 V, ID = 10 A 34 7.5 11.0 17 11 40 31 0.85 45 75 25 17 60 45 W ns ns 41 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 6 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 30 20 5V 20 TC = 125_C 10 25_C -55_C 0 10 3, 4 V 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71627 S-03829--Rev. A, 28-May-01 www.vishay.com 2 SI7852DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.04 r DS(on) - On-Resistance ( W ) 3000 Vishay Siliconix Capacitance 2500 0.03 C - Capacitance (pF) 2000 Ciss 0.02 VGS = 6 V VGS = 10 V 1500 1000 Crss 500 Coss 0.01 0.00 0 10 20 30 40 50 0 0 20 40 60 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 20 V GS - Gate-to-Source Voltage (V) VDS = 40 V ID = 10 A 16 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10 A 2.0 12 r DS(on) - On-Resistance (W) (Normalized) 30 45 60 1.5 8 1.0 4 0.5 0 0 15 Qg - Total Gate Charge (nC) 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 100 0.08 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 TJ = 150_C r DS(on) - On-Resistance ( W ) 0.06 ID = 10 A 1 TJ = 25_C 0.1 0.04 0.02 0.01 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71627 S-03829--Rev. A, 28-May-01 www.vishay.com 3 SI7852DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 100 Avalanche Current vs. Time 0.5 V GS(th) Variance (V) ID = 250 mA I DAV (A) 10 0.0 T = 25_C -0.5 1 -1.0 T = 125_C -1.5 -50 -25 0 25 50 75 100 125 150 0.1 10-5 10-4 10-3 10-2 Time (sec) 10-1 1 10 TJ - Temperature (_C) Single Pulse Power, Juncion-To-Ambient 100 80 Power (W) 60 40 20 0 0.001 0.01 0.1 Time (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 52_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 4 Document Number: 71627 S-03829--Rev. A, 28-May-01 SI7852DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71627 S-03829--Rev. A, 28-May-01 www.vishay.com 5 |
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